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DISCRETE SEMICONDUCTORS
DATA SHEET
BLV57 UHF linear push-pull power transistor
Product specification Supersedes data of August 1986 1998 Feb 09
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
FEATURES * internally matched input for wideband operation and high power gain * internal midpoint (r.f. ground) reduces negative feedback and improves power gain * increased input and output impedances (compared with single-ended transistors) simplify wideband matching * length of the external emitter leads is not critical * diffused emitter ballasting resistors for an optimum temperature profile * gold metallization ensures excellent reliability. DESCRIPTION
handbook, halfpage
BLV57
PINNING - SOT161A PIN 1 2 3 4 5 6 7 8 SYMBOL e e c2 b2 c1 b1 e e emitter emitter collector 2 base 2 collector 1 base 1 emitter emitter DESCRIPTION
Two n-p-n silicon planar epitaxial transistor sections in one package to be used as push-pull amplifier, primarily intended for use in linear u.h.f. television transmitters and transposers. The package is an 8-lead flange type with a ceramic cap. All leads are isolated from the flange.
1 3 5 7
2 4 6 8
Top view
MBC826
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA R.F. performance in linear amplifier MODE OF OPERATION class-A class-AB Notes 1. Three-tone test method (vision carrier -8 dB, sound carrier -7 dB, sideband signal -16 dB), zero dB corresponds to peak sync level. 2. Power gain compression is 1 dB. WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. fvision MHz 860 860 VCE V 25 25 IC1 = IC2 A 0,85 1,25 IC(ZS) A - 2 x 0,1 Th C 70 25 25 dim(1) dB -60 -55 - Po sync(1) W 6 typ. 12 - PL W - typ. 38(2) Gp dB 8,0 typ. 9,0 typ. 6,5(2)
1998 Feb 09
2
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-emitter voltage (peak value); VBE = 0 open base Emitter-base voltage (open collector) Collector current per transistor section d.c. or average (peak value); f 1 MHz Total power dissipation at Tmb = 25 Storage temperature Operating junction temperature Note 1. Dissipation of either transistor section should not exceed half rated dissipation. C(1) R.F. power dissipation (f 1 MHz); Tmb = 25 C(1) IC; IC(AV) ICM Ptot Prf Tstg Tj max. max. max. max. max. vCESM VCEO VEBO max. max. max.
BLV57
50 V 27 V 3,5 V 2A 4A 77 W(1) 93 W(1) 200 C
-65 to + 150 C
handbook, halfpage
10
MGP358
IC1 + IC2 (A)
(1)
Th = 70 C
Tmb = 25 C
1
1
10
VCE (V)
102
(1) Second breakdown limit (independent of temperature).
Fig.2 D.C. SOAR.(1)
1998 Feb 09
3
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
BLV57
MGP359
handbook, halfpage
100
Ptot (W) 75
50
25
0 0 50 Th (C) 100
I Continuous d.c. (including r.f. class-A) operation II Continuous r.f. operation Dissipation of either transistor section should not exceed half rated dissipation.
Fig.3 Power derating curves vs. temperature.(1)
THERMAL RESISTANCE (dissipation = 42 W; Tmb = 80,5 C, i.e. Th = 70 C) From junction to mounting base (d.c. dissipation) From junction to mounting base (r.f. dissipation) From mounting base to heatsink Rth j-mb(dc) Rth j-mb(rf) Rth mb-h = = = 2,43 1,91 0,25 K/W K/W K/W
1998 Feb 09
4
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
BLV57
handbook, full pagewidth
3
MGP360
Th = 120 C
100 C
80 C
60 C
40 C
20 C
Rth j-h (K/W) 0 C 2.5 Tj = 200 C 175 C 150 C 125 C 2 75 C 100 C
1.5 0 20 40 60 80 Ptot (W) 100
Fig.4
Maximum thermal resistance from junction to heatsink as a function of power dissipation, with heatsink and junction temperature as parameters. (Rth mb-h = 0,25 K/W.)
Example Nominal class-A push-pull operation (without r.f. signal): VCE = 25 V; IC1 = IC2 = 0,85 A; Th = 70 C. Fig.4 shows: Rth j-h Tj Typical device: Rth j-h Tj max. max. typ. typ. 2,68 K/W 184 C 2,28 K/W 167 C
1998 Feb 09
5
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
CHARACTERISTICS apply to either transistor section unless otherwise specified Tj = 25C Collector-emitter breakdown voltage VBE = 0; IC = 10 mA open base; IC = 25 mA Emitter-base breakdown voltage open collector; IE = 5 mA Collector cut-off current VBE = 0; VCE = 27 V Second breakdown energy; L = 25 mH; f = 50 Hz open base RBE = 10 D.C. current gain(1) IC = 0,85 A; VCE = 25 V D.C. current gain ratio of transistor sections IC = 0,85 A; VCE = 25 V Collector-emitter saturation IC = 1,7 A; IB = 0,17 A Transition frequency at f = 100 -IE = 0,85 A; VCB = 25 V -IE = 1,7 A; VCB = 25 V Collector capacitance at f = 1 MHz IE = Ie = 0; VCB = 25 V Feedback capacitance at f = 1 MHz IC = 50 mA; VCE = 25 V Collector-flange capacitance Notes 1. Measured under pulse conditions: tp 300 s; 0,02. 2. Measured under pulse conditions: tp 50 s; 0,01. The graphs apply to either transistor section. Cre Ccf typ. typ. Cc typ. MHz(2) fT fT typ. typ. voltage(1) VCEsat typ. 0,67 to 1,5 hFE ESBO ESBR typ. ICES V(BR)EBO V(BR)CES V(BR)CEO
BLV57
50 V 27 V 3,5 V 10 mA 2 mJ 2 mJ 15 40
0,75 V 2,5 GHz 2,5 GHz 24 pF 30 pF
15 pF 2 pF
1998 Feb 09
6
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
BLV57
MGP361
handbook, halfpage
10
IC (A) 1
Th = 70 C
25 C
10-1
10-2 0.5
1
1.5
VBE (V)
2
Fig.5 Typical values; VCE = 25 V.
MGP362
handbook, halfpage
60
hFE VCE = 25 V 40 5V
20
0 0 1 IC (A) 2
Fig.6 Typical values; Tj = 25 C.
1998 Feb 09
7
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
BLV57
MGP363
handbook, halfpage
4
fT (GHz) 3 typ
2
1
0 0 1 2 -IE (A) 3
Fig.7 VCB = 25 V; f = 500 MHz; Tj = 25 C.
MGP364
handbook, halfpage
100
Cc (pF) 75
50
typ 25
0 0 10 20 VCB (V) 30
Fig.8 IE = Ie = 0; f = 1 MHz; Tj = 25 C.
1998 Feb 09
8
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
APPLICATION INFORMATION R.F. performance in u.h.f. class-A operation (linear push-pull power amplifier) fvision (MHz) VCE (V) IC1 = IC2 (A) Th (C) 70 860 25 0,85 70 70 25 Note dim (1) (dB) -60 -60 -55 -55 typ. typ. typ. Po sync (1) (W) 6 7,5 10 12
BLV57
Gp (dB) typ. typ. typ. 8,0 8,5 8,5 9,0
1. Three-tone test method (vision carrier -8 dB, sound carrier -7 dB, sideband signal -16 dB), zero dB corresponds to peak sync level.
h
+VBB1 C5
+VCC1 C14 C11
C8 C15 T.U.T. L5 L1 C2 L3 L6 L9 L10 C20 L13
C22 C1 R1 C4 C6 C9 C13 C16 C19 C23 50 L2 C3 L4 L7 L8 L12 C17 C10 C7 C12 C18 L11 C21 L14 50
+VBB2
+VCC2
MGP365
Fig.9 Class-A test circuit at fvision = 860 MHz.
1998 Feb 09
9
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
List of components: C1 = C6 = C16 = 4,7 pF (500 V) multilayer ceramic chip capacitor (ATC(1)) C2 = C3 = C20 = C21 = 33 pF multilayer ceramic chip capacitor (cat. no. 2222 851 13339) C4 = C9 = C13 = C19 = 1,2 to 3,5 pF film dielectric trimmer (cat.no. 2222 809 05001) C5 = C7 = C15 = C17 = 100 nF multilayer ceramic chip capacitor (cat. no. 2222 852 59104) C8 = C10 = C11 = C12 = 220 pF multilayer ceramic chip capacitor (cat. no. 2222 852 13221) C14 = C18 = 6,8 F/40 V solid aluminium electrolytic capacitor C22 = C23 = 1 pF (500 V) multilayer ceramic chip capacitor (ATC(1)) C9 and C13 are placed 8,0 and 14,0 mm from transistor edge, respectively.
BLV57
L1 = L2 = L13 = L14 = 50 semi-rigid cable; outer diameter 2,2 mm; length 29,0 mm. These cables are soldered on 75 striplines (1,1 mm x 28,0 mm). The centre conductors of the cables L1 and L13 are not connected. L3 = L4 = 52 stripline (2,0 mm x 16,5 mm) L5 = L8 = 470 nH microchoke L6 = L7 = 39 stripline (3,1 mm x 8,0 mm) L9 = L12 = 1 turn Cu wire (1,0 mm); int. dia. 5,5 mm; leads 2 x 3,5 mm L10 = L11 = 39 stripline (3,1 mm x 34,0 mm) L3, L4, L6, L7, L10 and L11 are striplines on a double Cu-clad printed-circuit board with PTFE fibre-glass dielectric (r = 2,74); thickness 1/32". R1 = 10 carbon resistor Note 1. ATC means American Technical Ceramics.
1998 Feb 09
10
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
BLV57
64
handbook, full pagewidth
11
73
60
+VBB1
+VCC1
C14 C5 L1 L5 C2 C4 L3 C1 C3 input L2 C6 L4 L8 C7 C10 C8 C9 L6 L7 C11 L9 L10 L11 L12 C12 C18 C20 C15 C22 C13 L10 C19 C16 L11 C17 C21 L13 R1
C23 L14 output
MGP366
+VBB2
+VCC2
Fig.10 Component layout and printed-circuit board for 860 MHz class-A test circuit.
The circuit and the components are on one side of the PTFE fibre-glass board, the other side is unetched copper to serve as a ground-plane. Earth connections are made by means of bolts. Additionally copper straps are used under the emitters and at the input and output to provide direct contact between the copper on the component side and the ground-plane.
1998 Feb 09
11
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
BLV57
handbook, halfpage
-50
MGP367
10 Gp Gp (dB)
dim (dB)
-60 dim
5
-70
0 5 10 15 Po sync (W) 20
Fig.11 Intermodulation distortion (dim)(1) and power gain as a function of output power.
MGP368
handbook, halfpage
30
dcm (%) 20
10
0 0 10 Po sync (W) 20
Fig.12 Cross-modulation distortion (dcm)(2) as a function of output power.
1998 Feb 09
12
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
Conditions for Figs 11and 12: Typical values; VCE = 25 V; IC = 2 x 0,85 A; - - - Th = 25 C; Th = 70 C; fvision = 860 MHz.
BLV57
Ruggedness in push-pull class-A operation The BLV57 is capable of withstanding full load mismatch (VSWR = 50 through all phases) under the following conditions: VCE = 25 V; IC = 2 x 0,85 A; Th = 70 C; Po sync(1) 12,5 W; f = 860 MHz; Rth mb-h = 0,25 K/W. At any other composition of the output signal: PL (r.m.s. value) 5 W. Notes 1. Three-tone test method (vision carrier -8 dB, sound carrier -7 dB, sideband signal -16 dB), zero dB corresponds to peak sync level. Intermodulation distortion of input signal -70 dB. 2. Two-tone test method (vision carrier 0 dB, sound carrier -7 dB), zero dB corresponds to peak sync level. Cross-modulation distortion (dcm) is the voltage variation (%) of sound carrier when vision carrier is switched from 0 dB to -20 dB.
MGP369
handbook, halfpage
6
ri, xi () 4 xi
2 ri
0 400
650
f (MHz)
900
Fig.13 Input impedance (series components).
1998 Feb 09
13
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
BLV57
MGP370
handbook, halfpage
15
RL, XL () 10
RL 5 XL
0 400
650
f (MHz)
900
Fig.14 Load impedance (series components).
MGP371
handbook, halfpage
15
Gp (dB) 10
5
0 400
650
f (MHz)
900
Fig.15
1998 Feb 09
14
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
Conditions for Figs 13, 14 and 15: The graphs apply to either transistor section assuming class-A push-pull operation. Typical values; VCE = 25 V; IC = 0,85 A; Th = 70 C. APPLICATION INFORMATION R.F. performance in u.h.f. class-AB operation (c.w.) fvision (MHz) 860 860 Note VCE (V) 25 25 IC(ZS) (A) 2 x 0,1 2 x 0,1 Th (C) 25 70 PL (W) 12,5 38 12,5 30 typ. 1,10 typ. 55 typ. 1,25 typ. 60 IC1 = IC2 (A) (%)
BLV57
Gp(1) (dB) typ. 7,5 typ. 6,5 typ. 7,0 typ. 6,0
1. Typical values are based on 1 dB gain compression. Using a 3rd order amplitude transfer characteristic, 1 dB compression corresponds with 30% sync input/25% sync output compression in television service (negative modulation, C.C.I.R. system).
width
+VBB1 C8 C5 T.U.T. L5 L1 C2 L3 L6
+VCC1 C11 C14
L9 L10 C18 L13
C20 C1 R1 C4 C6 C9 C13 C15 C17 C21 50 L2 C3 L4 L7 L8 C7 C10 C12 L12 C16 L11 C19 L14 50
+VBB2
+VCC2
MGP372
Fig.16 Class-AB test circuit at fvision = 860 MHz.
1998 Feb 09
15
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
List of components: C1 = C6 = C15 = 4,7 pF (500 V) multilayer ceramic chip capacitor (ATC(1)) C2 = C3 = C18 = C19 = 33 pF multilayer ceramic chip capacitor (cat. no. 2222 851 13339) C4 = C9 = C13 = C17 = 1,2 to 3,5 pF film dielectric trimmer (cat. no. 2222 809 05001) C5 = C7 = C14 = C16 = 100 nF multilayer ceramic chip capacitor (cat. no. 2222 852 59104) C8 = C10 = C11 = C12 = 220 pF multilayer ceramic chip capacitor (cat. no. 2222 852 13221) C20 = C21 = 1 pF (500 V) multilayer ceramic chip capacitor (ATC(1)) C9 and C13 are placed 8,0 and 14,0 mm from transistor edge, respectively.
BLV57
L1 = L2 = L13 = L14 = 50 semi-rigid cable; outer diameter 2,2 mm; length 29,0 mm. These cables are soldered on 75 striplines (1,1 mm x 28,0 mm). The centre conductors of the cables L1 and L13 are not connected. L3 = L4 = 52 stripline (2,0 mm x 16,5 mm) L5 = L8 = 470 nH microchoke L6 = L7 = 39 stripline (3,1 mm x 8,0 mm) L9 = L12 = 1 turn Cu wire (1,0 mm); int. dia. 5,5 mm; leads 2 x 3,5 mm L10 = L11 = 39 stripline (3,1 mm x 34,0 mm) L3, L4, L6, L7, L10 and L11 are striplines on a double Cu-clad printed-circuit board with PTFE fibre-glass dielectric (r = 2,74); thickness 1/32" R1 = 10 carbon resistor. Note 1. ATC means American Technical Ceramics.
1998 Feb 09
16
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
BLV57
handbook, full pagewidth
64
11
73
60
+VBB1
+VCC1
C5 L1 L5 C2 C4 L3 C1 C3 input L2 C6 L4 L8 C7
C8 C9 L6 L7
C11 L9 L10 L11 L12
C14 C18 C13 L10 C17 C15 L11 C19 C16 C20 R1 L13
C21 L14 output
C10
C12
MGP373
+VBB2
+VCC2
Fig.17 Component layout and printed-circuit board for 860 MHz class-AB test circuit.
The circuit and the components are on one side of the PTFE fibre-glass board, the other side is unetched copper to serve as a ground-plane. Earth connections are made by means of bolts. Additionally copper straps are used under the emitters and at the input and output to provide direct contact between the copper on the component side and the ground-plane.
1998 Feb 09
17
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
BLV57
MGP374
handbook, halfpage
60
PL (W) 40
Th = 25 C
70 C 20
0 0 5 PS (W) 10
Fig.18 Typical values; VCE = 25 V; IC(ZS) = 2 x 0,1 A; fvision = 860 MHz.
MGP375
handbook, halfpage
7.5
75 Gp (%)
Gp (dB) 5
50
2.5
25
0 0 20 PL (W) 40
0
Fig.19 Typical values; VCE = 25 V; IC(ZS) = 2 x 0,1 A; - - - Th = 25 C; Th = 70C; fvision = 860 MHz.
1998 Feb 09
18
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
Ruggedness in class-AB operation
BLV57
The BLV57 is capable of withstanding a load mismatch (VSWR 2 through all phases) up to 30 W (r.m.s. value) or (VSWR 50 through all phases) up to 19 W under the following conditions: VCE = 25 V; Th = 70 C; f = 860 MHz; Rth mb-h = 0,25 K/W.
MGP376
handbook, halfpage
6
ri, xi () 4 xi
2 ri
0 400
650
f (MHz)
900
Fig.20 Input impedance (series components).
1998 Feb 09
19
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
BLV57
MGP377
handbook, halfpage
15
RL, XL () 10
RL
5 XL
0 400
650
f (MHz)
900
Fig.21 Load impedance (series components).
MGP378
handbook, halfpage
15
Gp (dB) 10
5
0 400
650
f (MHz)
900
Fig.22
Conditions for Figs 20; 21 and 22: The graphs apply to either transistor section assuming class-AB push-pull operation. Typical values; VCE = 25 V; IC(ZS) = 0,1 A; PL = 17,5 W (P.E.P); Th = 70 C. 1998 Feb 09 20
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
PACKAGE OUTLINE Flanged ceramic package; 2 mounting holes; 8 leads
BLV57
SOT161A
D
A F
U1 q H1 b1 C w2 M C
B
c
7
5
3
1
H
U2
E
A
8
6
4
2
b
p w3 M
w1 M A B Q
e1
e
0
5 scale
10 mm
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 7.27 6.47 b 2.04 1.77 b1 2.93 2.66 c D E e e1 3.80 F H H1 p Q q U1 U2 w1 w2 1.02 0.04 w3 0.26 0.01
0.18 10.22 10.22 3.50 0.10 10.00 10.00
2.70 17.00 12.83 3.36 2.08 16.00 12.57 2.92
4.32 24.97 10.34 18.42 0.51 4.06 24.71 10.08
0.286 0.080 0.115 0.007 0.402 0.402 0.106 0.669 0.505 0.132 0.170 0.983 0.407 0.138 0.150 0.725 0.02 0.255 0.070 0.105 0.004 0.394 0.394 0.082 0.630 0.495 0.120 0.160 0.973 0.397
OUTLINE VERSION SOT161A
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-06-28
1998 Feb 09
21
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BLV57
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1998 Feb 09
22
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
NOTES
BLV57
1998 Feb 09
23
Philips Semiconductors - a worldwide company
Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 160 1010, Fax. +43 160 101 1210 Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6, 220050 MINSK, Tel. +375 172 200 733, Fax. +375 172 200 773 Belgium: see The Netherlands Brazil: see South America Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor, 51 James Bourchier Blvd., 1407 SOFIA, Tel. +359 2 689 211, Fax. +359 2 689 102 Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Tel. +1 800 234 7381 China/Hong Kong: 501 Hong Kong Industrial Technology Centre, 72 Tat Chee Avenue, Kowloon Tong, HONG KONG, Tel. +852 2319 7888, Fax. +852 2319 7700 Colombia: see South America Czech Republic: see Austria Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S, Tel. +45 32 88 2636, Fax. +45 31 57 0044 Finland: Sinikalliontie 3, FIN-02630 ESPOO, Tel. +358 9 615800, Fax. +358 9 61580920 France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex, Tel. +33 1 40 99 6161, Fax. +33 1 40 99 6427 Germany: Hammerbrookstrae 69, D-20097 HAMBURG, Tel. +49 40 23 53 60, Fax. +49 40 23 536 300 Greece: No. 15, 25th March Street, GR 17778 TAVROS/ATHENS, Tel. +30 1 4894 339/239, Fax. +30 1 4814 240 Hungary: see Austria India: Philips INDIA Ltd, Band Box Building, 2nd floor, 254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025, Tel. +91 22 493 8541, Fax. +91 22 493 0966 Indonesia: see Singapore Ireland: Newstead, Clonskeagh, DUBLIN 14, Tel. +353 1 7640 000, Fax. +353 1 7640 200 Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053, TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007 Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3, 20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557 Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108, Tel. +81 3 3740 5130, Fax. +81 3 3740 5077 Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL, Tel. +82 2 709 1412, Fax. +82 2 709 1415 Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR, Tel. +60 3 750 5214, Fax. +60 3 757 4880 Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905, Tel. +9-5 800 234 7381 Middle East: see Italy Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB, Tel. +31 40 27 82785, Fax. +31 40 27 88399 New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND, Tel. +64 9 849 4160, Fax. +64 9 849 7811 Norway: Box 1, Manglerud 0612, OSLO, Tel. +47 22 74 8000, Fax. +47 22 74 8341 Philippines: Philips Semiconductors Philippines Inc., 106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474 Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA, Tel. +48 22 612 2831, Fax. +48 22 612 2327 Portugal: see Spain Romania: see Italy Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW, Tel. +7 095 755 6918, Fax. +7 095 755 6919 Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231, Tel. +65 350 2538, Fax. +65 251 6500 Slovakia: see Austria Slovenia: see Italy South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000, Tel. +27 11 470 5911, Fax. +27 11 470 5494 South America: Al. Vicente Pinzon, 173, 6th floor, 04547-130 SAO PAULO, SP, Brazil, Tel. +55 11 821 2333, Fax. +55 11 821 2382 Spain: Balmes 22, 08007 BARCELONA, Tel. +34 3 301 6312, Fax. +34 3 301 4107 Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM, Tel. +46 8 632 2000, Fax. +46 8 632 2745 Switzerland: Allmendstrasse 140, CH-8027 ZURICH, Tel. +41 1 488 2686, Fax. +41 1 488 3263 Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1, TAIPEI, Taiwan Tel. +886 2 2134 2865, Fax. +886 2 2134 2874 Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260, Tel. +66 2 745 4090, Fax. +66 2 398 0793 Turkey: Talatpasa Cad. No. 5, 80640 GULTEPE/ISTANBUL, Tel. +90 212 279 2770, Fax. +90 212 282 6707 Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7, 252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461 United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421 United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. +1 800 234 7381 Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD, Tel. +381 11 625 344, Fax.+381 11 635 777
For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1998
Internet: http://www.semiconductors.philips.com
SCA57
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
125108/00/02/pp24
Date of release: 1998 Feb 09
Document order number:
9397 750 03285

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